2D Insulators & Substrates,二維納米材料：絕緣體 |
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二維納米材料：絕緣體
2D Insulators & Substrates
2D Semiconductor公司主要生產各種二維納米材料，包括MoS, WS2, MoWS2, TlGaSe2, TlInS2, CuFeTe, FeTeSe, GePbSe, MoReS2, MoSSe, MoWS2, MoWSe2, ReNbS2, ReNbSe2, SbAsS3, WSSe, CuS, GaSeTe, GaSSe, Ges, InSe, SnSe, TlGaS2, TlGaSe2, TlInS2, GaS, GaSe, GaTe, GeSe, CoSe2, CoTe2, HfS2, HfSe2, MoS2, MoSe2, MoSSe, MoTe2, MoWS2, MoWSe2, ReS2, ReSe2, SnS2, SnSe2, SnTe2, TaS2, TaSe2, WS2, WSe2, WSSe, WTe2, ZrS2, ZrTe2, TiS3, CdI2, PbI2, As2S3, Bi2S3, Black Phosphorus, In2Se3, PbGa2Se4, PbSnS2, SbAsS3, VSe2, PtSe2, TiTe2, TiS2, TiSe2, NbS2, NbSe2, FeSe, FeTe, CuFeTe, FeTeSe, Ca(OH)2, h-BN, MICA, Mg(OH)2, Bi2S3, Bi2Se3, Bi2Se3, Bi2Se3, Bi2Te3, Bi2Se3(1-x)Te3x, Bi4Te3(1-x)S3x, MoSe2, WSe2, MoSe2, WSe2, WS2, Pb3Sn4, Sb2FeS14, Pb5Sn3Sb2S13。
An alternative to h-BN; substrates for 2D materials
V1 Grade 2D Material Substrate
Cheap & affordable replacement to h-BN. An ideal substrate – template for two-dimensional (2D) materials to eliminate ripple, surface roughness, and doping (charge transfer) effects.
Single Crystal Hexagonal Boron Nitride (h-BN) 氮化硼
Single Crystal Hexagonal Boron Nitride (h-BN) 氮化硼
Cheapest yet one of the highest quality Hexagonal boron nitride (h-BN) in the market. It is ideal as a substrate for 2D materials and heterostructures. Each order comes with multiple flakes in each package.
Undoped Bismuth Selenide (Bi2Se3) 三硒化二鉍
Developed at our facilities in the last three years with the perfect stoichiometry and with impressive stability in the topological insulator state. Insulating in bulk but conducting at the surface. It is layered similar to graphene, MoS2 and other 2D semiconductors and can be isolated to monolayers.
Ready to be measured and ideal for exfoliation. Extending range to topological insulator limit in 2D dimensions.
Single crystal Bismuth telluride (Bi2Te3) 碲化鉍
Bismuth Telluride (Bi2Te3) 碲化鉍
Developed at our facilities in the last three years with the perfect stoichiometry and with impressive stability in the topological insulator state. Insulating in bulk but conducting at the surface. It is layered similar to graphene, MoS2 and other 2D semiconductors and can be isolated to monolayers.
Ready to be measured and ideal for exfoliation. Extending range to topological insulator limit in 2D dimensions.
n-type Single crystal Bismuth selenide (Bi2Se3) 三硒化二鉍
n-type Bi2Se3 三硒化二鉍
n-type bismuth selenide (Bi2Se3) is developed at our facilities in 2013 with the perfect stoichiometry and with impressive stability in the topological insulator state. Insulating in bulk but conducting at the surface. It is layered similar to graphene, MoS2 and other 2D semiconductors and can be isolated to monolayers.
Ready to be measured and ideal for exfoliation. Extending range to topological insulator limit in 2D dimensions.
p-type Single crystal Bismuth selenide (Bi2Se3) 三硒化二鉍
p-type Bi2Se3 三硒化二鉍
p-type bismuth selenide (Bi2Se3) is developed at our facilities in 2013 with the perfect stoichiometry and with impressive stability in the topological insulator state. Insulating in bulk but conducting at the surface. It is layered similar to graphene, MoS2 and other 2D semiconductors and can be isolated to monolayers.
Ready to be measured and ideal for exfoliation. Extending range to topological insulator limit in 2D dimensions.
Bismuth Selenide Telluride 硒鉍碲
Bismuth Selenide Telluride (Bi2Se1.5Te1.5) 硒鉍碲
Bi3Se1.5Te1.5 is developed at our facilities last year and optimized overtime to reach perfect stoichiometry, crystallinity, and environmental stability. It is lamellar material similar to graphene, MoS2 and other 2D semiconductors and can be isolated to monolayers.
Ready to be measured and ideal for exfoliation.
Bismuth Telluride Sulfide 硒碲硫
Bismuth Telluride Sulfide (Bi4Te1.5S1.5) 硒碲硫
Bi4Te1.5S1.5 is developed at our facilities last year and optimized overtime to reach perfect stoichiometry, crystallinity, and environmental stability. It is lamellar material similar to graphene, MoS2 and other 2D semiconductors and can be isolated to monolayers.
Ready to be measured and ideal for exfoliation.
Monolayer Molybdenum disulfide solution 二硫化鉬溶液
Monolayer MoS2 solution 二硫化鉬溶液
High quality monolayer MoS2 solution
The first monolayer MoS2 solution that is made out of synthetic 99.995% quality MoS2 crystals for superior quality and reliability. Result of a month long processing steps.
Consistent and reliable PL & Raman results.
Enhanced PL signal compared to solution prepared out of MoS2 nano-powders.
Environmentally stable
In suspension of your choice (ethanol, methanol, benzene etc.)
Monolayer Tungsten disulfide solution 二硫化鎢溶液
Monolayer WS2 solution 二硫化鎢溶液
High quality monolayer WS2 solution
The first monolayer WS2 solution that is made out of synthetic 99.995% quality WS2 crystals for superior quality and reliability. Result of a month long processing steps.
Consistent and reliable PL & Raman results.
Enhanced PL signal compared to solution prepared out of WS2 nano-powders.
Environmentally stable
In suspension of your choice (ethanol, methanol, benzene etc.)
Monolayer hexagon boron nitride solution 氮化硼溶液
Monolayer h-BN solution 氮化硼溶液
High quality monolayer h-BN solution
The first monolayer h-BN solution that is made out of synthetic 99.995% quality h-BN crystals for superior quality and reliability. Result of a month long processing steps.
Consistent and reliable Raman results.
Environmentally stable
In suspension of your choice (ethanol, methanol, benzene etc.) h-BN solution has been prepared from high purity synthetic h-BN single crystals. The end product is optically active and environmentally stable. Contact us for more information Possible applications:Electronics Sensors - detectors Optics STM – AFM applications Molecular detection – binding Ultra-low friction studies Materials science and semiconductor research
Graphene oxide solution 氧化石墨烯溶液
Graphene oxide solution 氧化石墨烯溶液
Semiconductor analog of graphene; Graphene oxide in solution. Ideal for optical studies and solvent sensing. Graphene oxide is a result of our unique and long synthesis route. Our methods yield large size flakes with excellent oxygen passivation, and yet least amount of defect. The result is optically luminescent 2D carbonous material. The band gap is at 2.5 eV but display sub-gaps at 2.2, 2.0, and 1.7 eV. Ideal for 2D material research.
Pb3Sn4Sb2FeS14
Pb3Sn4Sb2FeS14
MX2 and MX layers are formed in the heterostructure layered form. Pb3Sn4Sb2FeS14 crystals are layered semiconducting compounds where the two adjacent layers (monolayers)
consist of T-slab (MX-type) and H-slab (MX2-type). The Pb3Sn4Sb2FeS14 band gap is at 0.7 eV in bulk and the values at low dimensions is yet to be discovered.
Interestingly, the Pb3Sn4FeSb2S14 is heterostructure layered material where the crystal consists of tetragonal and hexagonal phase layers stacked repetitively.
The Raman peaks are strong and the clear, sharp, strong XRD pattern display the high crystallinity of our products.
Shipped crystals are ready for exfoliation onto various substrates. Extend your verizon to natural heterolayers.
Pb5Sn3Sb2S13
Pb5Sn3Sb2S13
Pb5Sn3Sb2S13 is a layered crystal with natural heterostructure formation. The crystal has approximate composition of Pb4.6Ag0.2Sn2.5Fe0.8Sb2S12.6. It is semi-conducting and is composed of alternating pseudohexagonal (p-H) and pseudotetragonal (p-T) layers. These alternating layers results in rather rich physical properties ranging from extraordinary low temperature transport phenomena, ferromagnetic semiconductor, unusual exciton interaction. The layered structure has been confirmed by TEM measurements. The product is soft and bendable allowing you to exfoliate onto various substrates.
Extending your research to 2D heterostructure materials.
Graphene oxide
Graphene oxide (GO)
Semiconductor analog of graphene; Graphene oxide. Our unique synthesis mimics on reducing the defect density and large grain sizes to yield optically active, reliable, and fully oxygen saturated graphene oxide. The band gap is at 2.5 eV but display sub-gaps at 2.2, 2.0, and 1.7 eV. Ideal for 2D material research. Easy to yield monolayers within 10 minutes using our optimized deposition technique.
Nitrogen doped graphene
Nitrogen doped graphene
Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in the images, the flakes are ideal for exfoliation onto SiO2/Si substrates.
Carboxyl graphene
Carboxyl graphene
Carboxyl (-COOH) functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form. Carboxyl group reaches up to 3% and the product is 99.9% pure.
Ideal for materials, physics, biological sciences, and chemistry applications.
Graphene Fluoride
Graphene Fluoride
Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm. This product is ideal for battery, lubrication, thermal management, and 2D electronic / substrates applications. Monolayers can be deposited onto various substrates either by mechanical exfoliation or spin-coat process. The product comes with detailed exfoliation technique guideline allowing you to boost monolayer production rate.
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